High phosphorous incorporation in (100)-oriented MP CVD diamond growth

Diamond n-type layers are crucial for the development of a new bipolar diamond-based electronic technology. However, difficulties to incorporate impurity atoms into diamond lattice make its growth stage technological research still in progress. Phosphorus doping has been carried out successfully on (111)-oriented substrates, reaching high concentrations and good reproducibility. Nevertheless, such reproducible results have not obtained (100) orientations yet, even though substrate orientation is most used applications. In this study, three samples grown by microwave plasma-enhanced chemical vapor deposition (100)-oriented pressure temperature substrates. All deposited with same conditions except methane, which was varied between 1.5 % 3.5 %. A different mechanism observed each methane content used. The step flow shows increased phosphorus incorporation, determined cathodoluminescence (CL) cross sectional view focused ion beam preparations. This sample also less rough surface no crystal defects observable transmission electron microscopy (TEM). That why these fabrication layer p+/p−/n stack. Ellipsometry TEM measurements yield rate μm/h concentration 4 × 1017 cm−3, estimated CL spectroscopy. low density defects, optical microscopy. observations show dislocations 1/2 a〈110〉 burger vector stacking faults 1/3 〈111〉 displacement vector.